Direct measurement of antiferromagnetic domain fluctuations
نویسندگان
چکیده
منابع مشابه
Antiferromagnetic spin fluctuations in CeRhSn
We have carried out Sn nuclear magnetic resonance (NMR) measurements on the quasi-Kagomé compound CeRhSn. We found that Sn Knight shift sKd is highly anisotropic and shows Curie-Weiss type temperature sTd dependence above 25 K. In this T range, the NMR relaxation rate shows s1/T1d~ÎT and is enhanced by magnetic fluctuations. At low T’s, K stays constant and the enhanced Korringa relation of sT1...
متن کاملQuantum annealing with antiferromagnetic fluctuations.
We introduce antiferromagnetic quantum fluctuations into quantum annealing in addition to the conventional transverse-field term. We apply this method to the infinite-range ferromagnetic p-spin model, for which the conventional quantum annealing has been shown to have difficulties in finding the ground state efficiently due to a first-order transition. We study the phase diagram of this system ...
متن کاملMagnetic domain fluctuations in an antiferromagnetic film observed with coherent resonant soft x-ray scattering.
We report the direct observation of slow fluctuations of helical antiferromagnetic domains in an ultrathin holmium film using coherent resonant magnetic x-ray scattering. We observe a gradual increase of the fluctuations in the speckle pattern with increasing temperature, while at the same time a static contribution to the speckle pattern remains. This finding indicates that domain-wall fluctua...
متن کاملAntiferromagnetic domain size and exchange bias
M. R. Fitzsimmons,1 D. Lederman,2 M. Cheon,2 H. Shi,2,* J. Olamit,1 Igor V. Roshchin,3,4 and Ivan K. Schuller3 1Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA 2Department of Physics, West Virginia University, Morgantown, West Virginia 26506, USA 3Department of Physics, University of California at San Diego, La Jolla, California 92093, USA 4Department of Physics, Texas A&M Uni...
متن کاملRobust ferromagnetism carried by antiferromagnetic domain walls
Ferroic materials, such as ferromagnetic or ferroelectric materials, have been utilized as recording media for memory devices. A recent trend for downsizing, however, requires an alternative, because ferroic orders tend to become unstable for miniaturization. The domain wall nanoelectronics is a new developing direction for next-generation devices, in which atomic domain walls, rather than conv...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nature
سال: 2007
ISSN: 0028-0836,1476-4687
DOI: 10.1038/nature05776